9 February 1995 Indirect free-exciton luminescence in AgCl
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Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200953
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Abstract
Indirect free-exciton luminescence in AgCl single crystal accompanied by TO(L) phonon emission is found for the first time at 382.9 nm (3.238 eV) at 2 K for picosecond pulse laser excitation at 351 nm (3.53 eV). The luminescence decay curve monitored at 382.9 nm has a fast decay component, 20 ps, which is interpreted as the self-trapping time of holes generated at the L point. A luminescence band peaking at 385 nm (3.221 eV) is found, which is assigned as due to the optical transition from a point around the exit of the quantum mechanical tunneling process through the self-trapping potential barrier. The rise time 70 ps is interpreted as the time required for tunneling. A luminescence band peaking at 386.5 nm (3.208 eV) is found and assigned to be due to excitons bound by shallow impurity.
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Minoru Kobayasi, Yoshihiro Matsushima, Osamu Nishi, Ken-ichi Mizuno, Atsuo H. Matsui, "Indirect free-exciton luminescence in AgCl", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200953; https://doi.org/10.1117/12.200953
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