9 February 1995 Radiative recombination in CdSe/ZnTe heterojunction
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Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200993
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Abstract
Epitaxial monocrystalline CdSe layers are deposited on ZnTe substrates by sublimation in vacuum under dynamic equilibrium. The photoluminescence spectra at 4.2 degree(s) K of undoped and oxygen doped ZnTe substrates are dominated by the recombination of bound and free excitons and their phonon replica. When ZnTe is phosphorous doped the photoluminescence spectrum is determined by radiative transitions involving impurity levels, the conduction and the valence bands. The photoluminescence spectrum of undoped CdSe epitaxial layer reveals several excitonic lines near the band edge and their phonon replica. When CdSe is indium doped, the spectrum is dominated by a single luminescent band at a lower energy. The electroluminescence spectra for CdSe/ZnTe heterojunction were found consistent with a model in which carriers injection is taking place in the ZnTe substrate. Anomalous red and blue emissions were observed. The origin of these emissions has been explained in terms of recombination of carriers in an intermediate layer formed by atomic diffusion at the interface. A detailed model for the carrier injection mechanism in CdSe/ZnTe heterojunction is presented.
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Shawqi Al-Dallal, Shawqi Al-Dallal, } "Radiative recombination in CdSe/ZnTe heterojunction", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200993; https://doi.org/10.1117/12.200993
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