9 February 1995 Ultrafast exciton dynamics in semiconductors: effects of disorder and confinement
Author Affiliations +
Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200978
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Abstract
The dynamics of excitonic transitions in semiconductors have been investigated by degenerate four-wave mixing experiments. We have studied the coherence, interference and dephasing of free, bound and localized excitons in bulk semiconductors and of quasi-2D excitons in quantum well structures. The influence of inhomogeneous broadening is investigated and compared with quantum interference in a continuum of states. The nature of four-wave mixing beats in a system of bound excitons and biexcitons is discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jorn M. Hvam, Jorn M. Hvam, Vadim G. Lyssenko, Vadim G. Lyssenko, D. Birkedal, D. Birkedal, John Erland, John Erland, } "Ultrafast exciton dynamics in semiconductors: effects of disorder and confinement", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200978; https://doi.org/10.1117/12.200978
PROCEEDINGS
11 PAGES


SHARE
Back to Top