9 February 1995 Ultrafast exciton dynamics in semiconductors: effects of disorder and confinement
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Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200978
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Abstract
The dynamics of excitonic transitions in semiconductors have been investigated by degenerate four-wave mixing experiments. We have studied the coherence, interference and dephasing of free, bound and localized excitons in bulk semiconductors and of quasi-2D excitons in quantum well structures. The influence of inhomogeneous broadening is investigated and compared with quantum interference in a continuum of states. The nature of four-wave mixing beats in a system of bound excitons and biexcitons is discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jorn M. Hvam, Vadim G. Lyssenko, D. Birkedal, John Erland, "Ultrafast exciton dynamics in semiconductors: effects of disorder and confinement", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200978; https://doi.org/10.1117/12.200978
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