26 October 1994 Anomalous damage behavior of BF2+ implantation in silicon
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190740
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The anomalous damage behavior of BF2+ implantation into silicon at 300 K and 77 K has been investigated by using grazing angle Rutherford backscattering and channeling in combined with transmission electron microscopy. The damage or the amorphous layer produced by BF2+ implantation is different from other heavier ions (> 27Al+). For BF2+ implantation at 300 K, there are two damage peaks, one at a depth near the projectile range of the ions, the other at the near surface. While for BF2+ implantation at 77 K, the damage or the amorphous layer first occurs at the surface, then the amorphous layer is extended to the bulk of silicon with increasing does.
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Chenglu Lin, Chenglu Lin, Zu Yao Zhou, Zu Yao Zhou, Xiao Qin Li, Xiao Qin Li, Shichang Zou, Shichang Zou, Peter L. F. Hemment, Peter L. F. Hemment, } "Anomalous damage behavior of BF2+ implantation in silicon", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190740; https://doi.org/10.1117/12.190740
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