26 October 1994 Characteristics and distributions of interface trap for novel SiOxNy thin dielectric film material
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190799
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
This paper has studied the interface trap distributions and characteristics of novel thin rapid thermal nitrided SiOxNy film (RTNF) used for VLSI by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and quasistatic C-V characteristics. The research results gave that the distribution relationship of midgap interface trap density of the thin RTNF with nitridation time presented 'turnaround effect'. The different kinds of electronic traps, existing in the RTNF and having disparity densities, have been observed. Results indicated that two kinds of fast interface traps, which have different properties, were generated in the Si/SiOxNy interface during avalanche hot-electron injection. The distribution on the density of two interface traps with forbidden band position is provided. A weakly 'N' type distribution relationship of the midgap interface trap density with the avalanche injection dose is also given. The theoretical analyses and discussions of these results are also made in this paper.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Sheng Chen, P. Sheng Chen, Saipeng Wong, Saipeng Wong, "Characteristics and distributions of interface trap for novel SiOxNy thin dielectric film material", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190799; https://doi.org/10.1117/12.190799
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