Charge collection in a-Si:H/a-Si1-xCx multilayers photodetectors

Tao Jing; J. C. Delgado; J. Bertomeu; J. Drewray; Wan Shick Hong; H. Lee; Selig N. Kaplan; Ali Mireshghi; Victor Perez-Mendez

doi:10.1117/12.190778

26 October 1994 Charge collection in a-Si:H/a-Si_1-xC_x multilayers photodetectors

Tao Jing, J. C. Delgado, J. Bertomeu, J. Drewray, Wan Shick Hong, H. Lee, Selig N. Kaplan, Ali Mireshghi, Victor Perez-Mendez

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190778
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Amorphous semiconductors have been used as thin film transistor (TFT), solar cell, phototransistors. In this paper we study the charge collected properties of a-Si:H/a-Si_1-xC_x:H multilayer pin photodiode. In a-Si:H pin photodiode, the photogenerated carriers can be totally collected under strong electric field under reverse bias. However, our measurements show that in the a-Si:H/a-Si_1-xC_x:H multilayer pin photodiode photogenerated electrons and holes drift toward the electrodes under a certain bias, the total collected charge shows no saturation with bias and exhibits a continuous increas with reverse bias. We classify that the device works at two regions. In region I, the device behaves like a photodiode. This charge collection efficiency drop from theoretical value may indicate charge capture or confinement at the interfaces and trapping at the a-Si:H potential wells. These charges trapped or confined can be released at the interface and quantum well at higher electric field. In region II, above a critical bias voltage, the device works as a breakdown diode with a series photosensitive resistor which contributes higher collection efficiency, namely optical gain greater than unity.

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Tao Jing, J. C. Delgado, J. Bertomeu, J. Drewray, Wan Shick Hong, H. Lee, Selig N. Kaplan, Ali Mireshghi, and Victor Perez-Mendez "Charge collection in a-Si:H/a-Si_1-xC_x multilayers photodetectors", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190778

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