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26 October 1994 Charge collection in a-Si:H/a-Si1-xCx multilayers photodetectors
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190778
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Amorphous semiconductors have been used as thin film transistor (TFT), solar cell, phototransistors. In this paper we study the charge collected properties of a-Si:H/a-Si1-xCx:H multilayer pin photodiode. In a-Si:H pin photodiode, the photogenerated carriers can be totally collected under strong electric field under reverse bias. However, our measurements show that in the a-Si:H/a-Si1-xCx:H multilayer pin photodiode photogenerated electrons and holes drift toward the electrodes under a certain bias, the total collected charge shows no saturation with bias and exhibits a continuous increas with reverse bias. We classify that the device works at two regions. In region I, the device behaves like a photodiode. This charge collection efficiency drop from theoretical value may indicate charge capture or confinement at the interfaces and trapping at the a-Si:H potential wells. These charges trapped or confined can be released at the interface and quantum well at higher electric field. In region II, above a critical bias voltage, the device works as a breakdown diode with a series photosensitive resistor which contributes higher collection efficiency, namely optical gain greater than unity.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Jing, J. C. Delgado, J. Bertomeu, J. Drewray, Wan Shick Hong, H. Lee, Selig N. Kaplan, Ali Mireshghi, and Victor Perez-Mendez "Charge collection in a-Si:H/a-Si1-xCx multilayers photodetectors", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190778
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