26 October 1994 Chemical vapor deposition of polycrystalline diamond films onto the Si substrates coated by Si3N4 intermediate layers
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994); doi: 10.1117/12.190716
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Polycrystalline diamond films have been deposited onto Si3N4-coated silicon substrates using thermal chemical vapor deposition (CVD). The defects on the amorphous layer played an essential role in diamond nucleation. After the deposition, very few diamond crystallites were found on the untreated Si3N4 coating, while a diamond film had been formed on the ultrasonically treated Si3N4 coating with diamond powder. The adhesion of diamond film to Si3N4-coated Si substrates was stronger than that of diamond film to Si substrate and decreased as the CH4 concentration increased. The erosion resistance of diamond film on Si3N4-coated Si substrate was much stronger than that of Si3N4 film on Si substrate.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning Xu, Zhihao Zheng, Zhuo Sun, "Chemical vapor deposition of polycrystalline diamond films onto the Si substrates coated by Si3N4 intermediate layers", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190716; https://doi.org/10.1117/12.190716
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KEYWORDS
Diamond

Silicon

Chemical vapor deposition

Coating

Crystals

Resistance

Physics

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