Clustering and strain influence on the optical and vibrational properties of In0.53Ga0.47As/InP epitaxial heterostructures

Alexander I. Belogorokhov; E. V. Solov'eva; M. G. Mil'vidskii; A. N. Osipova

doi:10.1117/12.190786

26 October 1994 Clustering and strain influence on the optical and vibrational properties of In_0.53Ga_0.47As/InP epitaxial heterostructures

Alexander I. Belogorokhov, E. V. Solov'eva, M. G. Mil'vidskii, A. N. Osipova

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190786
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

InGaAs epitaxial layers (EL) have a number of physical properties which are very attracted for many practical applications. Special place in this system takes isoperiodical heterocomposition In_x Ga_1-xAs/InP, in order to receive EL's with minimum of mismatch on heterojunction. However lattice parameters of binary compounds InAs and GaAs which formed this solid solution differ by 7 percent. This is a reason of existence in In_x Ga_1-xAs considerable 'internal' strains, which are comparable with mixing enthalpy. Therefore phase transitions (ordering or clustering) take place in the solid solution. Such transitions decrease the system energy and may be occur during EL's growth. In this situation may be expected the fundamental properties dependence from thermal growth condition. In addition to the strains source inside EL's 'external' strains may be presented. They may be conditioned by EL's and substrate lattice mismatch, for example. Therefore it was interesting to retrace how physical properties of material change depending on layers lattice mismatch to substrate.

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Alexander I. Belogorokhov, E. V. Solov'eva, M. G. Mil'vidskii, and A. N. Osipova "Clustering and strain influence on the optical and vibrational properties of In_0.53Ga_0.47As/InP epitaxial heterostructures", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190786

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