Dual-beam photocurrent spectroscopy in undoped a-SI:H: a method for study of excited deep gap states in thin film semiconductors

J. Z. Liu; G. Lewen; Pere Roca i Cabarrocas

doi:10.1117/12.190738

26 October 1994 Dual-beam photocurrent spectroscopy in undoped a-SI:H: a method for study of excited deep gap states in thin film semiconductors

J. Z. Liu, G. Lewen, Pere Roca i Cabarrocas

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190738
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light for the D⁰ states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D^- defects (i.e., excited D⁰ defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.

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J. Z. Liu, G. Lewen, and Pere Roca i Cabarrocas "Dual-beam photocurrent spectroscopy in undoped a-SI:H: a method for study of excited deep gap states in thin film semiconductors", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190738

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