26 October 1994 Effects of film thickness and aluminum content on the optical and electrical properties of the polycrystalline ZnO:Al films prepared by rf planar magnetron sputtering
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190812
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The thickness and Al content dependence of the electrical properties and the IR absorption due to free electron, of ZnO:Al films prepared by rf magnetron sputtering was studied. As a result, it was found that the increase in the carrier concentration and the Hall mobility with increasing film thickness was ascribed to the decrement of real surface, namely the decrease in the number of chemisorbed oxygen on surface, and the spectral absorption due to the free carrier was approximately proportional to (lambda) 3.
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Yasuhiro Igasaki, Yasuhiro Igasaki, } "Effects of film thickness and aluminum content on the optical and electrical properties of the polycrystalline ZnO:Al films prepared by rf planar magnetron sputtering", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190812; https://doi.org/10.1117/12.190812
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