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26 October 1994 Evaporated SnS semiconducting thin films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190780
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Evaporated tin sulphide thin films (SnS) have been prepared onto glass substrates maintained at fixed temperatures in the range 50-300 degree(s)C and controlled film thicknesses. The films are nonstoichiometric, containing both SnS and its higher derivative compounds with different compositions. X-ray results showed that SnS was initially formed at 100 degree(s)C, accumulating and eventually became a stable compound at a substrate temperature, Ts of 300 degree(s)C. Observation on SEM micrographs revealed the existence of nonoriented film structures at low Ts and compacted crystalline structures at Ts equals 300 degree(s)C with the associated change in grain sizes from 0.1 to 1.2 micrometers . Film conductivity increased from 0.62 to 2.54 Sm-1 with increasing substrate temperature. The low temperature measurements showed that the films underwent hopping and free band conduction at temperatures lower and higher than 220 K, respectively. A further investigation on the film's transmittance spectrum shows the dependent of optical bandgaps (1.26-1.07 eV) with substrate temperatures; these were attributed to the changes in the film's compositions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Deraman, S. B. Sakrani, and Mostafa S. Ismail "Evaporated SnS semiconducting thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190780
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