26 October 1994 Ferroelectric thin films and their applications
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190727
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Ferroelectric materials such as lead zirconate titanate exhibit a range of physical properties of interest for different applications in today's technique. They are characterized by high dielectric constants and a permanent, electrically switchable polarization and display strong piezoelectric, pyroelectric and electrooptic effects. In the form of thin films, ferroelectrics can be integrated with existing semiconductor technologies. This opens a variety of possibilities to improve existing devices or to design new microelectronic and micromechanical components and devices such as nonvolatile memory devices, integrated multilayer capacitors, infrared detector arrays, electrooptic switches and modulators, microactuators and motors, integrated pressure and acceleration sensors and bulk acoustic resonator devices.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfram Wersing, Wolfram Wersing, Rainer Bruchhaus, Rainer Bruchhaus, } "Ferroelectric thin films and their applications", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190727; https://doi.org/10.1117/12.190727

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