26 October 1994 Formation characteristics and stability of nanometric TiN film in multilayers
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190726
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Formation characteristics and stability of TiN film as coating layer on (alpha) -Si film or as interlayer between W films or W and Si films have been studied by TEM, SAD and XRD. Experimental results show that sputtered nanometric TiN films are homogeneous polycrystalline with high stability: diffusion between TiN and W or TiN and Si can be neglected until 850 degree(s)C and there is no reaction of TiN with W or TiN with Si in these multilayers even if they are annealed up to 900 degree(s)C.
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Lingyun Zhou, Lingyun Zhou, Liwen Wu, Liwen Wu, Wenhan Liu, Wenhan Liu, Zhenjia Xu, Zhenjia Xu, Yuheng Zhang, Yuheng Zhang, "Formation characteristics and stability of nanometric TiN film in multilayers", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190726; https://doi.org/10.1117/12.190726
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