26 October 1994 Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190734
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We have successfully realized boron (delta) -function-shaped doping in the silicon epilayer by molecular beam epitaxy (MBE) with a B2O3 doping source. The sheet boron concentration N(Beta ) of the boron (delta) doping layer can exceed 3.4 X 1014 cm-2. The transmission electron microscopy (TEM) cross-section image shows the width of the (delta) doping layer is about 1.5 nm. Meanwhile, we have applied in situ Auger electron spectroscopy (AES) to quantitatively analyze the relationship of boron (delta) doping sheet concentration N(Beta ) with the (delta) doping time. With the substrate temperature of 650 degree(s)C and the doping source temperature of 900 degree(s)C, for N(Beta ) < 3.4 X 1014 cm-2 (1/2 monolayer), boron incorporation onto Si (100) is proportional to the (delta) doping time, and the sticking coefficient is 4.4 X 1013 cm-2/min; while for N(Beta ) > 3.4 X 1014 cm-2, the incorporation tends to saturate. The residual oxygen has not been detected even if N(Beta ) is up to 4.4 X 1014 cm-2.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. J. Chen, Q. H. Wang, D. W. Gong, Y. Yang, Hong Quiang Lu, Fang Lu, Y. L. Fan, Xue Kun Lu, Z. M. Jiang, Xiang-Jiu Zhang, Xun Wang, "Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190734; https://doi.org/10.1117/12.190734
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