26 October 1994 Growth and some properties of AlxIn1-xN crystalline thin films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190782
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
AlxIn1-xN thin films have been fabricated on (0001) oriented (alpha) --Al2O3 sapphire substrates by microwave- excited metalorganic vapor phase epitaxy. The properties of the films have been studied by the reflection high-energy electron diffraction technique, x-ray diffraction, and optical measurements. At growth temperature of 600 degree(s)C, single crystalline layers of AlxIn1-xN were obtained for the first time. The fundamental absorption edge of the AlxIn1-xN film varies continuously with composition.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qixin Guo, Qixin Guo, Hiroshi Ogawa, Hiroshi Ogawa, Akira Yoshida, Akira Yoshida, } "Growth and some properties of AlxIn1-xN crystalline thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190782; https://doi.org/10.1117/12.190782
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