Translator Disclaimer
26 October 1994 Growth and surface structure of epitaxial Be thin films
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190777
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We have investigated the growth of beryllium thin films on (alpha) - Al2O3, Si (111), and Ge (111). In all cases, epitaxial Be films were obtained under the proper conditions. The effects of substrate temperature T on crystalline quality and surface structure were also studied. Samples were analyzed in situ using reflection high energy electron diffraction and ex situ with ion beam analysis, scanning electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. Studies showed an increase in crystalline quality with increased T, as well as the presence of a surface superstructure, probably (root)3 X (root)3, R30 degree(s), for films deposited on Si at T >= 300 degree(s)C and films on Ge at T >= 200 degree(s)C. To date, the highest quality Be films are those grown on Ge (111) at T equals 300 degree(s)C.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles M. Falco, James Eickmann, Judith A. Ruffner, and Jon M. Slaughter "Growth and surface structure of epitaxial Be thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190777
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top