26 October 1994 High-resolution x-ray study of Ti/Fe interface with oxygen contamination
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190766
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Ti/Fe bilayers are deposited on SiO2 substrate in ultra-high- vacuum environment (10-9 Torr) in different sequence: SiO2/Fe(200 angstrom)/Ti(300 angstrom) and SiO2/Ti(300 angstrom)/Fe(200 angstrom). The interfaces of the films and their evolution at various annealing stages are studied by X-ray reflectivity measurements using high resolution triple-crystal X-ray diffractometer. The study shows that a different sequence of deposition results in different microstructure and affects subsequent evolution of the interfaces. It is also noticed that the annealed films are contaminated by the oxygen. Electron density profiles for the structures are obtained by nonlinear least square fits to the reflectivity curves.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tianqu Gu, Tianqu Gu, Mark Sutton, Mark Sutton, Zhihua Yan, Zhihua Yan, Robert Schulz, Robert Schulz, } "High-resolution x-ray study of Ti/Fe interface with oxygen contamination", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190766; https://doi.org/10.1117/12.190766
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