Paper
26 October 1994 Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD
Zhuo Sun, Zhihao Zheng, Ning Xu
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190719
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
In synthsis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO3, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer of diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhuo Sun, Zhihao Zheng, and Ning Xu "Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190719
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KEYWORDS
Diamond

Chemical vapor deposition

Crystals

Silicon

Silicon carbide

Surface finishing

Ultrasonics

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