26 October 1994 Infrared spectroscopy analysis of porous silicon: a comparison of various preparation conditions
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190744
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The role of silicon hydride species in the photoluminescence intensity behavior of porous silicon (PS) has been studied. The surface coverage was monitored using Fourier Transform Spectroscopy (FTIR). Porous silicon sample sets was prepared by the anodization of p-type (111) Si (10 Ohm X cm) and of n-type (111) Si (0.01 Ohm X cm) under a various current density for a different time of anodization with light illumination and in the dark. We have observed non- monotonous dependencies of PL intensity, IR absorption at Si-Hn stretching and wagging modes as well as of p-type Si and n-type Si versus anodization time and current density. In particular, the levels of IR absorption at the different Si-H modes have no correlation themselves and only wagging mode (628 cm-1) repeat the PL intensity behavior. To our opinion, the photoluminescence may originate from the specific combinations of the particle structure and sizes with the definite surface state conditions of the nanocrystalline porous silicon.
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Alexander I. Belogorokhov, Alexander I. Belogorokhov, Lubov I. Belogorokhova, Lubov I. Belogorokhova, V. A. Karavanskii, V. A. Karavanskii, "Infrared spectroscopy analysis of porous silicon: a comparison of various preparation conditions", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190744; https://doi.org/10.1117/12.190744
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