26 October 1994 Interfacial deep levels in nano-crystalline silicon films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190784
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Using highly hydrogen diluted silane as the reaction gas which was resolved with r.f. + d.c. double power sources, we have fabricated the nano-crystallite silicon (nc-Si) films. Based on the interfacial trap theory of poly-Si and revised by small size effect, we have got the relationship between conductivity of nc-Si films and defect levels in its interfacial region. Photoabsorption spectra and conductivity of nc-Si have been measured at low temperatures from 4.2 K to 77 K. According to theoretical analyses and experimental results, we suggest that the temperature behavior of the conductivity of nc-Si film is exponential at low temperature; the defect levels which are induced by interfaces are deep levels. Photoconduction experiments show that the carrier lifetime of nc-Si is as high as 10 ms, and the trap effects are very strong.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yayi Wei, Yayi Wei, Guozhen Zheng, Guozhen Zheng, Yuliang L. He, Yuliang L. He, } "Interfacial deep levels in nano-crystalline silicon films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190784; https://doi.org/10.1117/12.190784

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