Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)

Wen-Jie Qi; Bing-Zong Li; Wei-Ning Huang; Zhi Guang Gu; Hong Quiang Lu; Xiang-Jiu Zhang; Ming Zhang; Guo-Sheng Dong

doi:10.1117/12.190805

26 October 1994 Interfacial reaction of bilayer Co/Ti with Si_1-xGe_x epitaxially grown on Si(100)

Wen-Jie Qi, Bing-Zong Li, Wei-Ning Huang, Zhi Guang Gu, Hong Quiang Lu, Xiang-Jiu Zhang, Ming Zhang, Guo-Sheng Dong

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190805
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

The interfacial reaction of bilayer Co/Ti with epitaxially grown Si_1-xGe_x layer with x equals 0.2 was investigated in this work. The multilayer films were characterized by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The experimental results show the formation of a multi-layer of TiN(O)/CoSi₂(Ge)/Si. A highly preferential orientation was observed for the formed CoSi₂(Ge) layer. The resulted resistivity of Co/Ti/SiGe/Si after a high temperature annealing is close to that of typical CoSi₂ film.

Citation Download Citation

Wen-Jie Qi, Bing-Zong Li, Wei-Ning Huang, Zhi Guang Gu, Hong Quiang Lu, Xiang-Jiu Zhang, Ming Zhang, and Guo-Sheng Dong "Interfacial reaction of bilayer Co/Ti with Si_1-xGe_x epitaxially grown on Si(100)", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190805

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