26 October 1994 Investigation of the boron-doped CVD diamond films for use in sensors
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190823
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Boron-doped polycrystalline diamond thin films may have some use in electroanalysis since the doped diamond films are electrically conductive and chemically inert. In order to use the boron doped diamond thin films as an active electrode in sensors, we have investigated properties of the boron doped diamond thin films grown on silicon substrates by hot-filament assisted chemical vapor deposition (CVD) using a gas mixture of methane and hydrogen. As-deposited films were characterized by Raman spectroscopy and scanning electron microscopy for their chemical nature and morphology, respectively. In situ doping of boron was achieved by heating H3BO3 powder during the deposition. The electrochemical behavior of the boron doped diamond thin film electrodes were investigated using cyclic voltammetry. A reduction peak of Fe3+ was observed. Our results show that the boron doped diamond thin films possess suitable properties of an electrode material for use in sensors.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shenzhong Yang, Jianzhong Zhu, Youfang Yao, Xingen Lu, and Xikang Zhang "Investigation of the boron-doped CVD diamond films for use in sensors", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190823; https://doi.org/10.1117/12.190823
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