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26 October 1994 Ion beam synthesis of thin films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190725
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The main research activities of thin film synthesis by ion beam technique in Shanghai Institute of Metallurgy (SIM) are reviewed. Hard and metal alloy coatings, such as TiN, TiBx, SiNx, DLC (diamond like carbon), Pt, and NI/Cr-Ag, are synthesized by ion beam assisted deposition (IBAD) on different kinds of substrates at room temperature. The mechanical, electrical properties and the microstructure of the films were systematically analyzed and discussed with the formation conditions. The experimental result reveals that one of the outstanding characteristic of the IBAD films is the very strong adhesion strength to the substrates. Buried layer formation by ion implantation is one of another newly developed technique. The formation of buried insulating layer in silicon crystal is carried out by high dose O+ and N+ implantation. Epitaxial growth of high Tc YBCO superconductive thin films on SrTiO3 is studied by DC magnetron sputtering.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shichang Zou "Ion beam synthesis of thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190725; https://doi.org/10.1117/12.190725
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