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26 October 1994 Kinetics of oxide formation on FeCrAl thin films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190810
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The thermal oxidation kinetics of FeCrAl alloy thin films in ambient air been investigated in the temperature range 400 approximately equals 530 degree(s)C. The films were deposited on to oxidized single crystal silicon wafers and glass substrates with thermal evaporation. In the studied region the growth of oxides has been found to obey a parabolic growth-rate law, the oxidation mechanism has been analyzed with Wagner model. The rate constant k, is temperature dependent and satisfies the Arrhenius relationship. The activation enthalpy Hp is evaluated. Auger electron spectrometry and X-ray diffraction have been used to investigate depth distribution and valence state of metals and oxygen during oxide growth.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yonggang Wu "Kinetics of oxide formation on FeCrAl thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190810
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