26 October 1994 Luminescent Si quantum dots films: preparation and characterization
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994); doi: 10.1117/12.190736
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We report two kinds of method for preparing luminescent silicon films with quantum crystallites (QCs) structures: (1) Using laser annealing technique to crystallize ultrathin amorphous silicon layers which were constructed in a-Si:H/a-SiNx:H multiquantum well (MQW) structures. (2) Applying the layer-by-layer deposition technique to the growth of silicon QCs by varying the hydrogen plasma exposure time. The novel structures of these two types of QCs films were characterized by X-ray diffraction and Raman scattering spectroscopy. The room temperature visible photoluminescence (PL) from Si QCs with size of 4 nm or less has been observed in most of samples.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kun-Ji Chen, Xinfan Huang, Maorui Chen, Weihua Shi, Zhifeng Li, Duan Feng, "Luminescent Si quantum dots films: preparation and characterization", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190736; https://doi.org/10.1117/12.190736
PROCEEDINGS
5 PAGES


SHARE
KEYWORDS
Silicon

Crystals

Laser crystals

Hydrogen

Plasma

Quantum dots

Gadolinium

Back to Top