26 October 1994 Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190808
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
HF acid eroded Si wafers were used as substrates for deposition diamond film by HFCVD. The nucleation process and film characteristics were studied. Enhanced nucleation density to the level for abraded Se substrate and pronounced (111) texture of the obtained continuous diamond film were observed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuanxiong Zhang, Xuanxiong Zhang, Xikang Zhang, Xikang Zhang, Shenzhong Yang, Shenzhong Yang, Youfang Yao, Youfang Yao, Tian-Shen Shi, Tian-Shen Shi, } "Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190808; https://doi.org/10.1117/12.190808
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