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26 October 1994 PZT/a-Si:H composite thin film and photoelectric transfer
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190797
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
A new PZT/a-Si:H composite thin film is introduced in this paper. Its whole structure is pt/PZT/CR/a-Si:H/ITO. PZT thin film was prepared by RF sputtering method in the thickness of 0.5-1.0 micrometers , while a- Si:H thin film was prepared by RF glow discharge method with its thickness controlled to match the PZT thin film in resistance. The resistivity of a-Si:H thin film will drop about four order under optical exposure. Hence, when the composite thin film is exposed to light, the voltage applied to it will be transferred from a-Si:H to PZT. This composite thin film has many advantages such as fast response, high density, cheap price and easy match with Si integrated circuit. A lot of new devices can be designed with this thin film: Photoelectric switch, photomemory, optical sensor, etc.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dao-Huai Wu, Zhang Zhou, Hui-Ting Chen, Da Wei Yu, and Yongling Wang "PZT/a-Si:H composite thin film and photoelectric transfer", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190797
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