26 October 1994 Phase formation in annealed Ge/Fe multilayers
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190715
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Ge/Fe multilayers, which were prepared by electron beam evaporation, were annealed at temperatures between 200 and 450 degree(s)C, and the formations have been investigated. It was found that the structure of the surface layer and the interior is quite different. With the results of X-ray diffraction patterns and Mossbauer spectra, the different compound phases were found at different annealing temperature.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-zhi Li, Yu-zhi Li, Tie Li, Tie Li, Zhi Mou, Zhi Mou, Lin Chen, Lin Chen, Cunyi Xu, Cunyi Xu, Guien Zhou, Guien Zhou, "Phase formation in annealed Ge/Fe multilayers", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190715; https://doi.org/10.1117/12.190715

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