26 October 1994 Photo-enhanced MOCVD of Pb(Zr,Ti)O3 thin films using O3
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190806
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Effects of O3 on the growth and electrical properties of Pb(Zr,Ti)O3 (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using (3 at substrate temperatures higher than 560 degree(s)C. The crystalline orientation, growth rate and growth temperature were scarcely influenced by the use of O3 and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O3 and photoirradiation was observed. From SEM observations, it was found that this improvement may be caused by the microscopic change in film structure.
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Masaru Shimizu, Masaru Shimizu, Masataka Sugiyama, Masataka Sugiyama, Hironori Fujisawa, Hironori Fujisawa, Tadashi Shiosaki, Tadashi Shiosaki, } "Photo-enhanced MOCVD of Pb(Zr,Ti)O3 thin films using O3", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190806; https://doi.org/10.1117/12.190806
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