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26 October 1994 Photoluminescence characterization of InGaAs/InP quantum dots
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994)
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
The photo-excited carrier distribution and radiative recombination efficiency in dryetched quantum well dots (QWDs) with diameters down to 80 nm have been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. The quantum well dots were fabricated from lattice-matched single or multiple quantum well heterostructures with InGaAs well thicknesses ranging from 2 to 15 nm. Low temperature CL imaging indicated dot-to-dot variation of emission intensity. The PL efficiency exhibits no significant reduction for dot sizes larger than 170 nm. But for dot diameters smaller than approximately equals 100 nm, the PL intensity is not detectable. Such diminution of PL intensity is attributed to side wall damage due to reactive ion etching. For dot diameters smaller than 300 nm, PL peak energies shift to higher values, reaching a blue shift of approximately equals 3 meV for 128 nm diameter GSMBE grown dots and approximately equals 10 meV for 130 nm diameter MOCVD grown dots.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Q. Gu, E. E. Reuter, Q. Xu, R. Panepucci, Arnold C. Chen, Hung-Pin Chang, Ilesanmi Adesida, Keh-Yung Y. Cheng, Stephen G. Bishop, Catherine Caneau, and Rajaram J. Bhat "Photoluminescence characterization of InGaAs/InP quantum dots", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994);

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