Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy

Yong Yang; Xue Kun Lu; Da-Ming Huang; X. J. Chen; Zuimin Jiang; M. Yang; Y. L. Fan; D. W. Gong; G. Zhao; Xun Wang

doi:10.1117/12.190791

26 October 1994 Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy

Yong Yang, Xue Kun Lu, Da-Ming Huang, X. J. Chen, Zuimin Jiang, M. Yang, Y. L. Fan, D. W. Gong, G. Zhao, Xun Wang

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190791
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

We reported deep-level-free band edge luminescence from strained SiGe/Si multiple quantum well structures grown by conventional solid source Si MBE. No-phonon (NP) transitions due to symmetry-breaking alloy disordering in SiGe layers and transverse optical (TO) phonon replicas were clearly identified. A high quality of crystallinity is essential to the efficient luminescence. The choice of a higher growth temperature, Ts equals 870 degree(s)C, beyond the conventional growth temperature window 400-600 degree(s)C, was found to be important for radioactive recombination in SiGe/Si QWs structures.

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Yong Yang, Xue Kun Lu, Da-Ming Huang, X. J. Chen, Zuimin Jiang, M. Yang, Y. L. Fan, D. W. Gong, G. Zhao, and Xun Wang "Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190791

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