26 October 1994 Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190791
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We reported deep-level-free band edge luminescence from strained SiGe/Si multiple quantum well structures grown by conventional solid source Si MBE. No-phonon (NP) transitions due to symmetry-breaking alloy disordering in SiGe layers and transverse optical (TO) phonon replicas were clearly identified. A high quality of crystallinity is essential to the efficient luminescence. The choice of a higher growth temperature, Ts equals 870 degree(s)C, beyond the conventional growth temperature window 400-600 degree(s)C, was found to be important for radioactive recombination in SiGe/Si QWs structures.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong Yang, Xue Kun Lu, Da-Ming Huang, X. J. Chen, Zuimin Jiang, M. Yang, Y. L. Fan, D. W. Gong, G. Zhao, Xun Wang, "Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190791; https://doi.org/10.1117/12.190791
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