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26 October 1994 Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190745
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
When the dicarbon point defect with photoluminescence line at 969 meV (7818 cm-1) is thermally destroyed, previously unreported photoluminescence lines at 902.73 (7281), 919.72 (7418), 924.06 (7453), 935.09 (7542) and 949.85 meV (7661 cm-1) are observed. It is shown that the point defects providing these photoluminescence lines consist of carbon and oxygen atoms. Previously reported photoluminescence sublines of the dicarbon center located at 951.16 (7671), 952.98 (7686), 953.96 (7694) and 956.91 meV (7718 cm-1) are not observed in Czochralski silicon with high oxygen concentration. It is shown that vacancies are not the species to modify the dicarbon center forming these satellite sublines and interstitial silicon atoms are the remaining possibility.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. K. Kwok "Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190745
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