26 October 1994 Polarization reversal in ferroelectric thin films
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994); doi: 10.1117/12.190798
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Switching characteristics of ferroelectric thin films (103 to 104 angstrom) at the crossover field from subsonic (via domain wall motion) to supersonic (via random reversal of individual dipoles) switching is investigated. The switching behavior of TGS (singlecrystal) and PZT (ceramic) films is discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Beatriz Noheda, Tomas Iglesias, Gines Lifante, Jose A. Gonzalo de los Reyes, "Polarization reversal in ferroelectric thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190798; https://doi.org/10.1117/12.190798
PROCEEDINGS
5 PAGES


SHARE
KEYWORDS
Thin films

Polarization

Switching

Ceramics

Ferroelectric materials

Back to Top