26 October 1994 Pulsed laser deposition and characterization of Nb-doped PZT thin films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994); doi: 10.1117/12.190796
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
A first attempt to growth thin films of Nb doped PZT with 96% of Zr by pulsed laser deposition (PLD) has been done on Pt-sputtered Si (100) single crystal substrates. The target [1.5% Nb doped Pb(Zr0.965Ti0.035)O3] has been ablated in oxygen atmosphere with a focused KrF excimer laser beam. By changing the laser repetition rate and the deposition time, the thickness of the films was selected in the 150-400 nm range. The lead deficiency of the film was reduced by using an oxygen pressure of 75 mTorr as well as by holding the substrates at temperatures not higher than 500 degree(s)C. The results of the characterization show that a first (150-180 nm) layer is the main responsible of the lead deficiency, the low resistivity and the lack of ferroelectric response of the films grown.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Beatriz Noheda, Juan Rubio, Jose A. Gonzalo de los Reyes, C. Zaldo, "Pulsed laser deposition and characterization of Nb-doped PZT thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190796; https://doi.org/10.1117/12.190796
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KEYWORDS
Lead

Ferroelectric materials

Thin films

Zirconium

Ceramics

Niobium

Oxygen

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