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26 October 1994 Recent advances on luminescence in porous silicon
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190733
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Our recent work in seeking the confirmative experimental evidences which support the quantum confinement mechanism of visible light emission from porous silicon (PS) is presented. The first successful observation of efficient infrared up-conversion luminescence verifies that the PS sample is an assembly of quantum confined structures with reduced dimensionalities. A double-resonance enhanced third-order nonlinear optical process is suggested to interpret the experimental observation. The carrier transfer mechanism involved in the light emission process is studied by the picosecond time-resolved luminescence spectroscopy. A comprehensive luminescence model which takes account into both the effects of quantum confinement and of surface states as well as the carrier transfer dynamics is proposed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xun Wang "Recent advances on luminescence in porous silicon", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190733; https://doi.org/10.1117/12.190733
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