26 October 1994 Spontaneous superlattice in GaInP alloy semiconductor
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190769
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Spontaneously ordered phases in random alloy semiconductor have been observed in Ga0.5In0.5P grown on GaAs substrate by organometallic vapor-phase epitaxy. Together with the GaInP alloy semiconductor, such spontaneous atomic ordering has been observed in other alloy semiconductors. Based upon the results by transmission electron diffraction measurements on these GaInP alloy semiconductors, the ordering in the atomic arrangement has been determined to the so- called CuPt-type structure which is equivalent to the [111]- oriented GaP-InP monolayer superlattice. We have systematically investigated the optical properties of these spontaneously ordered GaInP alloy semiconductors by using spectroscopic methods such as photoluminescence and electroreflectance. The results show anomalous behaviors in both the optical spectra, which are quite different from those observed in random GaInP alloy semiconductors.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taneo Nishino, Taneo Nishino, } "Spontaneous superlattice in GaInP alloy semiconductor", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190769; https://doi.org/10.1117/12.190769
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