26 October 1994 Strain effects and band offset control of GaxIn1-xAs/AlyIn1-yAs quantum wells
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190771
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The strain effects on GaInAs/AlInAs quantum wells grown on InP substrates were studied theoretically. Three structures, i.e., GaxIn1-xAs/Al0.48Ga0.52As, Ga0.47In0.53As/AlyIn1-yAs and GaxIn1-xAs/AlyIn1-yAs were analyzed. It was shown that the band alignments for the strained structures change obviously compared with the unstrained case. The type-I and type-II band lineups can be formed respectively for the heavy-hole and light-hole valence subbands. The strain effect on the band discontinuities give a possibility to control the band offset for GaxIn1-xAs/AlyIn1-yAs quantum well structures by using the strained layers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming Qi, Ming Qi, Aizhen Li, Aizhen Li, } "Strain effects and band offset control of GaxIn1-xAs/AlyIn1-yAs quantum wells", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190771; https://doi.org/10.1117/12.190771
PROCEEDINGS
5 PAGES


SHARE
Back to Top