26 October 1994 Study of the selectivity of porous silicon formation
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190743
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
The process of the porous silicon layer formation and etching off is a new generation surface micromachining technology. The key problem of using porous silicon as a sacrificial layer is to do research on the selectivity of porous layer formation. In this paper, we will present the experimental results about which that the silicon is transformed to porous silicon in concentrated HF solution, including the relationship with current density J (mA/cm2), HF concentration C (wt%) and the substrate resistivity ((Omega) cm). Besides, by using implantation and epitaxial methods to change the doping level of the mask, porous silicon can be locally formed, the thickness and the undercutting may be changed by the parameters described before.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinjun Wan, Xinjun Wan, Yun Zhen Wang, Yun Zhen Wang, Zongsheng Lai, Zongsheng Lai, } "Study of the selectivity of porous silicon formation", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190743; https://doi.org/10.1117/12.190743

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