26 October 1994 Vertical high-speed rotating disk reactors for production scale MOVPE of compound semiconductors
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190807
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Compound semiconductors are at the heart of todays advanced digital and optoelectronic devices. As device production levels increase, so too does the need for high throughput deposition systems. The vertical rotating disk reactor (RDR) has been scaled to dimensions allowing metal organic chemical vapor deposition (MOCVD) on multiple substrates located on a 300 mm diameter platter. This symmetric large area reactor affords easy access over a wide range of angles for optical monitoring and control of the growth process. The RDR can be numerically modeled in a straightforward manner, and we have derived scaling rules allowing the prediction of optimum process conditions for larger reactor sizes. The material results give excellent agreement with the modeling, demonstrating GaAs/AlAs structures with < +/- 0.9% thickness uniformities on up to 17-50 mm or 4-100 mm GaAs substrates. Process issues related to reactor scaling are reviewed. With high reactant efficiencies and short cycle times between growths, through the use of a vacuum loadlock, the costs per wafer are found to be dramatically less than in alternative process reactors. The high reactant utilization, in combination with a dedicated and highly efficient exhaust scrubbing system, minimizes the systems environmental impact.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert C. Walker, Robert C. Walker, Alan G. Thompson, Alan G. Thompson, Gary S. Tompa, Gary S. Tompa, Peter A. Zawadzki, Peter A. Zawadzki, Alexander Gurary, Alexander Gurary, } "Vertical high-speed rotating disk reactors for production scale MOVPE of compound semiconductors", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190807; https://doi.org/10.1117/12.190807
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