26 October 1994 Visible photoluminescent Ge nanocrystals embedded in a-SiNx films
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190814
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Ge nanocrystals embedded in a-SiNx matrix were prepared by the PECVD method with SiH4, GeH4 and NH3 mixed in H2 plasma and followed the thermal-annealing treatment, which was based on the preferential chemical bonding formation of Si-N and Ge-Ge. The samples were characterized by infrared absorption, X-ray diffraction, Raman scattering spectra and TEM micrograph. Visible photoluminescence was observed at room temperature with the PL peak at about 560 nm and the linewidth about 0.45 eV. We are temporarily using the quantum confinement model to explain the PL mechanism.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuexuan Qu, Xuexuan Qu, Xinfan Huang, Xinfan Huang, Kun-Ji Chen, Kun-Ji Chen, Zhifeng Li, Zhifeng Li, Duan Feng, Duan Feng, } "Visible photoluminescent Ge nanocrystals embedded in a-SiNx films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190814; https://doi.org/10.1117/12.190814
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