26 October 1994 Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190765
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We report the effect of the well width on room temperature operation of II-VI p-i-n quantum Stark effect modulators using ZnSe-ZnCdSe multiple quantum well structures within ZnSe p-n junctions. Results are given for the theoretical calculation of exciton binding energy and Stark shift, absorption and differential absorption as a function of the applied electric field. An optimum well width is estimated in current structures for the achievement of the largest (Delta) T/T by means of both theoretical and experimental approaches.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiu Yao Tang, Tomohisa Onishi, H. Kurusu, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, "Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190765; https://doi.org/10.1117/12.190765
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