26 October 1994 Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190765
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
We report the effect of the well width on room temperature operation of II-VI p-i-n quantum Stark effect modulators using ZnSe-ZnCdSe multiple quantum well structures within ZnSe p-n junctions. Results are given for the theoretical calculation of exciton binding energy and Stark shift, absorption and differential absorption as a function of the applied electric field. An optimum well width is estimated in current structures for the achievement of the largest (Delta) T/T by means of both theoretical and experimental approaches.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiu Yao Tang, Jiu Yao Tang, Tomohisa Onishi, Tomohisa Onishi, H. Kurusu, H. Kurusu, Yoichi Kawakami, Yoichi Kawakami, Shizuo Fujita, Shizuo Fujita, Shigeo Fujita, Shigeo Fujita, } "Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190765; https://doi.org/10.1117/12.190765
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