26 October 1994 Zr-ion bombardment effect on ZrO2/Zircaloy-4 system
Author Affiliations +
Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190762
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
The ZrO2/Zircaloy-4 systems before and after Zr+ bombardment at low temperature have been studied by use of Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is shown that 100-keV Zr+ bombardment of ZrO2/Zr-4 system at low temperature leads to significant changes of compositional distribution in depth, and meanwhile, results in the alteration of oxide film thickness. Such results may be governed by these factors, such as bombardment conditions, the thickness of ZrO2 films before bombardment, the amount of surface chemisorption oxygen Oad bombarded into matrix due to collision, and the overlapping extent between oxide film and bombardment damage areas and so on. It is shown that Zr+ bombardment enhances oxygen diffusion towards matrix significantly, interface mixing is also observed. XPS is used to determine both compositional and valerice states changes.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Bao, Jun Bao, Chunlai Ma, Chunlai Ma, Xinde Bai, Xinde Bai, Heming Chen, Heming Chen, Fen Liu, Fen Liu, Yeng Chen, Yeng Chen, } "Zr-ion bombardment effect on ZrO2/Zircaloy-4 system", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190762; https://doi.org/10.1117/12.190762
PROCEEDINGS
6 PAGES


SHARE
Back to Top