19 January 1995 Process monitoring and control of integrated-circuit manufacturing using Fourier transform infrared spectroscopy
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Proceedings Volume 2367, Optical Sensors for Environmental and Chemical Process Monitoring; (1995) https://doi.org/10.1117/12.199664
Event: Optical Sensing for Environmental and Process Monitoring, 1994, McLean, VA, United States
Abstract
A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties of integrated circuits. Properties, such as film thickness, dielectric constant, and free carrier concentration were determined for a variety of important electronic films both in the laboratory and in process reactors. The latter measurements were accomplished by optically interfacing a Fourier transform infrared (FT-IR) spectrometer to several reactors. Real-time process monitoring allowed determination of deposition rate, free carrier activation temperature, and the influence of reactor conditions on film properties. Finally, these measurements were nondestructive, performed in-situ and within seconds, demonstrating the utility of this method for real-time process monitoring and control.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shaohua Liu, Shaohua Liu, John R. Haigis, John R. Haigis, Marie B. DiTaranto, Marie B. DiTaranto, Karen Kinsella, Karen Kinsella, James R. Markham, James R. Markham, Qi Li, Qi Li, David B. Fenner, David B. Fenner, Peter R. Solomon, Peter R. Solomon, Stuart Farquharson, Stuart Farquharson, Philip W. Morrison, Philip W. Morrison, } "Process monitoring and control of integrated-circuit manufacturing using Fourier transform infrared spectroscopy", Proc. SPIE 2367, Optical Sensors for Environmental and Chemical Process Monitoring, (19 January 1995); doi: 10.1117/12.199664; https://doi.org/10.1117/12.199664
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