16 October 1995 Characterization of p-on-n HgCdTe diffusion photodiodes
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224983
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source into the n-type HgCdTe bulk single crystals. The temperature dependence of current- voltage and capacity-voltage characteristics, and the photodiode speed response, were analyzed. For 3 - 5-micrometer photodiodes with the electron concentration 3 multiplied by 1015 cm-3 in the base n-type layer, the typical resistance-area product at zero bias RoA was about 104 (Omega) cm2 at 77 K. For 8 - 12 micrometer photodiodes with the same electron concentrations in the base region, the RoA product values of 1 - 10 (Omega) cm2 were obtained. The typical photoresponse speeds were in the range of 50 ns and 20 - 30 ns for 3 - 5-micrometer and 8 - 12-micrometer photodiodes, respectively. The dark current of fabricated photodiodes was tunneling limited at 77 K, and generation-recombination and diffusion limited at higher temperatures.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Tetyorkin, Vladimir V. Tetyorkin, Jaroslaw Rutkowski, Jaroslaw Rutkowski, Antoni Rogalski, Antoni Rogalski, Fiodor F. Sizov, Fiodor F. Sizov, } "Characterization of p-on-n HgCdTe diffusion photodiodes", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224983; https://doi.org/10.1117/12.224983


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