16 October 1995 Crystal growth of undoped semi-insulating InP
Author Affiliations +
Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224934
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Nominally undoped and lightly Fe-doped semi-insulating InP can be prepared by thermal annealing under phosphorus vapor pressure. Semi-insulating undoped material obtained in this work has not indicated iron content. Thermal annealing process of InP:Fe with NFe <EQ 8 (DOT) 1016 cm-3 improves its electrical parameters. The material has been characterized by: Hall effect and conductivity measurements, resistivity and Fe concentration distribution, photoluminescence measurements.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Hruban, Andrzej Hruban, S. Strzelecka, S. Strzelecka, E. Jurkiewicz Wegner, E. Jurkiewicz Wegner, M. Gladysz, M. Gladysz, W. Orlowski, W. Orlowski, M. Piersa, M. Piersa, A. Mirowska, A. Mirowska, } "Crystal growth of undoped semi-insulating InP", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224934; https://doi.org/10.1117/12.224934

Back to Top