16 October 1995 Developments in floating zone silicon crystal growth
Author Affiliations +
Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224975
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
In this paper, the influence of the inductor design on the heat distribution in the growing floating zone silicon crystal is shown. Especially for the inductor profile and the slot width qualitative and quantitative results are given.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Schroeder, W. Schroeder, H. Riemann, H. Riemann, A. Luedge, A. Luedge, "Developments in floating zone silicon crystal growth", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224975; https://doi.org/10.1117/12.224975
PROCEEDINGS
9 PAGES


SHARE
Back to Top