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16 October 1995 Energy levels in strained semiconductor heterojunctions
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224950
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
A review of the effect of the internal biaxial strain on the energy bands in thin film heterostructures composed of the cubic structure semiconductors is presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Oszwaldowski "Energy levels in strained semiconductor heterojunctions", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224950
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