16 October 1995 Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224980
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
We compare several key infrared detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equal to 1017 photons/cm2-sec. The detector materials include photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, photoconductive (PC) GaAs/AlGaAs quantum well infrared photodetector (QWIP) and PV InGaAs/InP; the device sizes range from 64 multiplied by 64 to 1024 multiplied by 1024.
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Lester J. Kozlowski, Lester J. Kozlowski, Jose M. Arias, Jose M. Arias, William E. Tennant, William E. Tennant, } "Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224980; https://doi.org/10.1117/12.224980
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